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Título:
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Epitaxial integration of CoFe?O? thin films on Si (001) surfaces using TiN buffer layers
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Autores:
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Prieto, Pilar ;
Marco, F. ;
Prieto, José E. ;
Ruiz Gómez, Sandra ;
Pérez García, Lucas ;
Perez del Real, Rafael ;
Velazquez, Manuel ;
De laFiguera, Juan
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Tipo de documento:
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texto impreso
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Editorial:
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Elsevier Science B. V., 2018-04-01
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Dimensiones:
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application/pdf
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Nota general:
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cc_by_nc_nd
info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Materia = Ciencias: Física: Física del estado sólido
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Tipo = Artículo
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Resumen:
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Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe?, or ceramic, CoFe?2O?, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe?O? [100]/TiN [100]/Si [100]. Mossbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in- plane anisotropy depends on the lattice mismatch between CoFe?O? and TiN, which is larger for CoFe?O? thin films grown on the reactive sputtering process with ceramic targets.
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En línea:
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https://eprints.ucm.es/46086/1/PerezLucas%2017%20POSTP%2BEMB%2001_04_2020.pdf
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