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Título:
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Effects of the d-donor level of vanadium on the properties of Zn_(1-x)V_(x)O films
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Autores:
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García Hemme, Eric ;
Yu, K. M. ;
Wahnon, P. ;
González Díaz, Germán ;
Walukiewicz, W.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 2015-05-04
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn_(1-x)V_(x)O with 0 ? x ? 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that electron concentration increases with vanadium up to x = 0.04 and then decreases and films become insulating for x > 0.06. Optical characterization reveals that the absorption edge shifts to higher energy, while the photoluminescence (PL) peak shows a shift to lower energy with increasing vanadium content. This unusual optical behavior can be explained by an anticrossing interaction between the vanadium d-levels and the conduction band (CB) of ZnO. The interaction results in an upward shift of unoccupied CB (E+) and the downward shift of the fully occupied E- band derived from the vanadium d-levels. The composition dependence of optical absorption edge (E+) and PL peak (E-) can be fitted using the Band Anticrossing model with the vanadium d-level located at 0.13 eV below CB of ZnO and a coupling constant of 0.65 eV.
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En línea:
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https://eprints.ucm.es/id/eprint/31317/1/Gonzalez-Diaz%2CG%20135libre.pdf
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