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Título:
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Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique
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Autores:
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Plaza, J. L: ;
Hidalgo Alcalde, Pedro ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier ;
Dieguez, E.
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Tipo de documento:
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texto impreso
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Editorial:
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Elsevier Science B.V., 2002-06
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Nd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical Bridgman technique. The axial segregation has been characterised by obtaining the effective segregation coefficient. Differences in the value of this coefficient show its dopant concentration dependence. Resistivity, carrier density and mobility have also been obtained showing the p-type nature of this material. Structural and compositional properties have been studied revealing some inclusions with high Nd concentration in the highest Nd-doped ingot.
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En línea:
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https://eprints.ucm.es/id/eprint/24439/1/MendezBianchi37.pdf
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