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Título:
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Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
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Autores:
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Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier ;
Domínguez-Adame Acosta, Francisco ;
De Diego, N.
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 1988-11-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Cathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs: Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higer vacancy concentration has been detected in the Te-doped samples relative to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes.
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En línea:
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https://eprints.ucm.es/id/eprint/25136/1/MendezBianchi87libre.pdf
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