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Título:
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Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Barbolla, J. ;
Castán, E. ;
Dueñas, S. ;
Peláez, R. ;
Pinacho, R. ;
Quintanilla, L.
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 1997-08-11
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics.
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En línea:
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https://eprints.ucm.es/id/eprint/27068/1/Martil%2C101libre.pdf
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