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Título:
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Electron transport across a Gaussian superlattice
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Autores:
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Gómez, I. ;
Domínguez-Adame Acosta, Francisco ;
Díez, E. ;
Bellani, V.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1999-04-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is expected to present a lower number of unintentional defects and, consequently, better performance. The j-V characteristic presents negative differential resistance with peak-to-valley ratios much greater than in conventional semiconductor superlattices.
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En línea:
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https://eprints.ucm.es/id/eprint/27588/1/Dguez-Adame100libre.pdf
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