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Título:
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Carrier recombination at screw dislocations in n-type AlGaN layers
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Autores:
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Albrecht, M. ;
Cremades Rodríguez, Ana Isabel ;
Krinke, J. ;
Christiansen, S. ;
Ambacher, O. ;
Piqueras de Noriega, Javier ;
Strunk, H. P. ;
Stutzmann, M.
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Tipo de documento:
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texto impreso
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Editorial:
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Wiley-V C H Verlag Gmbh, 1999-11
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/restrictedAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative recombination centres. From temperature dependent measurements of the EBIC contrast we find a shallow acceptor state 20 meV above the valence band. The level can be understood iri terms of one-dimensional dislocation bands split off by the dislocation deformation field. In addition piezoelectric potentials play a role.
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En línea:
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https://eprints.ucm.es/id/eprint/23447/1/CremadesAna44.pdf
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