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Título:
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Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires
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Autores:
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Nogales Díaz, Emilio ;
Sánchez, B. ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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Academic Press Ltd- Elsevier Science Ltd, 2009-04
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires have been investigated by means of the secondary electrons and cathodoluminescence (CL) techniques in the SEM. Red and blue-UV emission bands appear as complex bands and their components are influenced by the presence of In or Al, leading to a blue-shift of the blue-UV band usually observed in undoped gallium oxide. These In and Al related changes in the luminescence features of doped Ga_2O_3 nanostructures are discussed.
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En línea:
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https://eprints.ucm.es/id/eprint/24273/1/MendezBianchi14.pdf
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