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Albrecht, M. ; Cremades Rodríguez, Ana Isabel ; Krinke, J. ; Christiansen, S. ; Ambacher, O. ; Piqueras de Noriega, Javier ; Strunk, H. P. ; Stutzmann, M. | Wiley-V C H Verlag Gmbh | 1999-11We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Albrecht, M. ; Krinke, J. ; Dimitrov, R. ; Stutzmann, M. ; Strunk, H. P. | American Institute of Physics | 2000-03-01Combined electron beam induced current and transmission electron microscopy (TEM) measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminum contents x ranging from x = 0 to x = 0.79, in order to correlate [...]texto impreso
Cremades Rodríguez, Ana Isabel ; Albrecht, M. ; Voigt, A. ; Krinke, J. ; Dimitrov, R. ; Ambacher, O. ; Stutzmann, M. | Trans Tech-Scitec Publications LDT | 1998Combined electron beam induced current and transmission electron microscopy measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminium contents x ranging from x=0 to x=0.79. TEM analysis shows the distribu[...]
