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Monteiro, T. ; Pereira, E. ; Correia, M. R. ; Xavier, C. ; Hofmann, D. M. ; Meyer, B. K. ; Fischer, S. ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | Elsevier Science BV | 1997-06Mid-band-gap emissions in GaN epilayers grown on 6H-SiC and sapphire are studied by time-resolved spectroscopy (TRS). The yellow luminescence peaking at ca. 1.2 eV at low-temperature shifts to higher energies with increasing temperature. The pre[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Xavier, C. ; Monteiro, T. ; Pereira, E. ; Meyer, B.K. ; Hofmann, D. M. ; Fischer, S. | American Institute of Physics | 1996-12-15GaN epitaxial layers have been investigated by cathodoluminescence (CL) in the scanning electron microscope (SEM). The most prominent feature of the spectra is a complex band at 2.2 eV, whose evolution with temperature and excitation density sug[...]
