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Título:
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Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
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Autores:
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Rodríguez Fernández, J. ;
Carcelen, V. ;
Hidalgo Alcalde, Pedro ;
Vijayan, N. ;
Piqueras de Noriega, Javier ;
Sochinskii, N. V. ;
Pérez, J. M. ;
Dieguez, E.
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 2009-08-15
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.
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En línea:
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https://eprints.ucm.es/id/eprint/25508/1/HidalgoP15libre.pdf
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