Título:
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Thermal stability of intermediate band behavior in Ti implanted Si
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Olea Ariza, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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Elsevier Science BV, 2010-11
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/restrictedAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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Ti implantation in Si with very high doses has been performed. Subsequent Pulsed Laser Melting (PLM) annealing produces good crystalline lattice with electrical transport properties that are well explained by the Intermediate Band (IB) theory. Thermal stability of this new material is analyzed by means of isochronal annealing in thermodynamic equilibrium conditions at increasing temperature. A progressive deactivation of the IB behavior is shown during thermal annealing, and structural and electrical measurements are reported in order to find out the origin of this result.
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En línea:
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https://eprints.ucm.es/id/eprint/25846/1/Martil%2C16.pdf
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