Título:
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Thermally induced changes in the optical properties of SiNx : H films deposited by the electron cyclotron resonance plasma method
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Prado Millán, Álvaro del
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1999-08-15
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We analyze the effect of thermal processes on the optical properties (refractive index, optical gap, Tauc coefficient, and Urbach energy) of SiNx:H films. Films with three different nitrogen to silicon ratios (x = 0.97, x = 1.43, and x = 1.55, respectively) were deposited by a chemical vapor deposition technique assisted by an electron cyclotron resonance generated plasma. After deposition they were subjected to rapid thermal annealing at temperatures ranging from 300 degrees C to 1050 degrees C. We found that the percolation threshold for Si-Si bonds (at x = 1.1) separates films with different response to thermal treatments. The changes of the Tauc coefficient and the Urbach energy at moderate annealing temperatures indicate a structural relaxation of the network for the films with x above the percolation threshold, while at higher temperatures the trends are inverted. In the case of x below the percolation limit the inversion point is not observed. These trends are well correlated with the width of the Si-N infrared stretching absorption band. Additionally the samples with as-grown x = 1.43 show a good correlation between the Urbach energy and the density of unpaired spins in silicon dangling bonds. (C) 1999 American Institute of Physics. [S0021-8979(99)08016-0].
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En línea:
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https://eprints.ucm.es/id/eprint/26862/1/Martil%2C82libre.pdf
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