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Título:
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Effect of In doping in GaSb crystals studied by cathodoluminescence
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Autores:
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Hidalgo Alcalde, Pedro ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier ;
Dutta, P: S. ;
Dieguez, E.
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Tipo de documento:
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texto impreso
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Editorial:
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IOP publishing ltd, 1999-10
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concentration in contrast to what occurs with other isoelectronic dopants (e.g. aluminium). Large In concentrations lead to the formation of the ternary compound In_xGa_(1-x)Sb as revealed by CL spectra and x-ray measurements. In particular, a luminescence band and x-ray diffraction peaks observed in highly doped samples are attributed to the presence of In_xGa_(1-x)Sb.
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En línea:
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https://eprints.ucm.es/id/eprint/24673/1/MendezBianchi47.pdf
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