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Título:
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Nature of compensating luminescence centers in Te-diffused and -doped GaSb
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Autores:
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Dutta, P. S. ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier ;
Dieguez, E. ;
Bhat, H. L.
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 1996-07-15
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Diffusion of tellurium In undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundamental differences in the radiative levels are observed between the diffused and the as-grown doped samples. Evidence for self-compensating acceptor complexes are seen in diffused samples. With short and moderate diffusion times, a compensating acceptor complex VGaGaSbTeSb is observed. For long diffusion times, the dominant acceptor center has been attributed to the antisite defect Ga-Sb or related complex. The reasons for the formation of various acceptor centers have been discussed.
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En línea:
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https://eprints.ucm.es/id/eprint/24834/1/MendezBianchi61libre.pdf
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