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Título:
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Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO_(2)
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Autores:
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Ramírez, J. G. ;
Schmidt, Rainer ;
Sharoni, A. ;
Gómez, M. E. ;
Schuller, Ivan K. ;
Patiño, Edgar J.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 2013-02-11
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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Temperature dependent dielectric spectroscopy measurements on vanadium dioxide thin films allow us to distinguish between the resistive, capacitive, and inductive contributions to the impedance across the metal-insulator transition (MIT). We developed a single, universal, equivalent circuit model to describe the dielectric behavior above and below the MIT. Our model takes account of phase-coexistence of metallic and insulating regions. We find evidence for the existence at low temperature of ultra-thin threads as described by a resistor-inductor element. A conventional resistorcapacitor element connected in parallel accounts for the insulating phase and the dielectric relaxation.
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En línea:
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https://eprints.ucm.es/id/eprint/32500/1/Schmidt01.libre.pdf
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