Título:
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Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Olea Ariza, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 2009-01-26
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 10(20)-10(21) cm(-3) concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action.
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En línea:
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https://eprints.ucm.es/id/eprint/25910/1/Martil%2C22libre.pdf
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