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Título:
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Study of defects in In_xGa_(1-x)Sb bulk crystals
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Autores:
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Díaz-Guerra Viejo, Carlos ;
Chioncel, M. F. ;
Vincent, J ;
Bermudez, V. ;
Piqueras de Noriega, Javier ;
Dieguez, E.
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Tipo de documento:
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texto impreso
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Editorial:
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Wiley-V C H Verlag Gmbh, 2005
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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The homogeneity and luminescence properties of undoped and Te-doped In_xGa_(1-x)Sb crystals grown by the Bridgman and Vertical Feeding methods have been studied by cathodoluminescence (CL) and X-ray microanalysis in a scanning electron microscope. CL micrographs reveal the presence of non-radiative grain boundaries and dislocations in the investigated samples. Annealing at 650 degrees C for 36 h significantly improves the structural quality and the compositional homogeneity of the Te-doped crystals. CL spectra of the ternary alloy were found to show features similar to those reported for GaSb.
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