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Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
Carcelen, V. ; Vijayan, N. ; Rodríguez Fernández, J. ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Elsevier Science BV | 2009-02-15The II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) os[...]texto impreso
Rodríguez Fernández, J. ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Amer Inst Physics | 2009-08-15Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), an[...]texto impreso
Rodríguez Fernández, José ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Institute of Physics | 2004-01-21The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of four distinct silicon carbide (SiC) samples: a 6H-SiC n^+ -type Lely wafer, two off-axis 4H-SiC epitaxial layers of n type and p type, and a (11 [...]
