Título:
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Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán
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Tipo de documento:
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texto impreso
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Editorial:
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World Scientific Publ. Co. Pte.Ltd., 2002-11-20
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro-Raman measurements on these defects show that they consist of InxGa1-xP alloys, suggesting that phosphorus diffusion from the InP substrate occurs during the RTA cycle. The defect-free region of the epilayer is also altered leading to the formation of an In1-xGaxAs1-yPy quaternary alloy.
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En línea:
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https://eprints.ucm.es/id/eprint/26171/1/Martil%2C57.pdf
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