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Título:
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Thomas-fermi approach to resonant-tunneling in delta-doped diodes
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Autores:
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Díez, E. ;
Domínguez-Adame Acosta, Francisco ;
Sánchez, Angel
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1995-05-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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We study resonant tunneling in B-S-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation. we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diode. 0 1995 American Institute of Physics.
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En línea:
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https://eprints.ucm.es/id/eprint/27712/1/Dguez-Adame136libre.pdf
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