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Autor Hubert, Guillaume |
Documentos disponibles escritos por este autor (8)
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Rezaei, Mohammadreza ; Martín Holgado, Pedro ; Morilla, Yolanda ; Franco Peláez, Francisco Javier ; Fabero Jiménez, Juan Carlos ; Mecha López, Hortensia ; Puchner, Helmut ; Hubert, Guillaume ; Clemente Barreira, Juan Antonio | IEEE-Inst Electrical Electronics Engineers Inc | 2020-10This article presents an experimental study on the sensitivity of a commercial-off-the-shelf (COTS) bulk 65-nm static random access memory (SRAM) under 15.6 MeV proton irradiation when powered up at ultralow bias voltage. Tests were run on stand[...]texto impreso
Velazco, Raoul ; Clemente Barreira, Juan Antonio ; Hubert, Guillaume ; Mansour, Wassim ; Palomar Trives, Carlos ; Franco Peláez, Francisco Javier ; Baylac, Maud ; Rey, Solenne ; Rosetto, Olivier ; Villa, Francesca | IEEE-Inst Electrical Electronics Engineers Inc | 2014-12Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section.[...]texto impreso
Hubert, Guillaume ; Aubry, Sébastien ; Clemente Barreira, Juan Antonio | The Institute of Electrical and Electronics Engineers (IEEE) | 2020-03-02This article proposes to study the impact of ground-level enhancement (GLE) induced by extreme solar flares on the soft error rate (SER) for flight representatives to the world-air traffic. A GLE physical model was confronted to cosmic ray varia[...]texto impreso
Clemente Barreira, Juan Antonio ; Hubert, Guillaume ; Franco Peláez, Francisco Javier ; Vila, Francesca ; Baylac, Maud ; Puchner, Helmut ; Velazco, Raoul ; Mecha López, Hortensia | IEEE-Inst Electrical Electronics Engineers Inc | 2017-08-01This paper presents the characterization of the sensitivity to 14-MeV neutrons of a Commercial Off-The-Shelf (COTS) 90-nm Static Random Access Memories (SRAMs) manufactured by Cypress Semiconductor, when biased at ultra low voltage. Firstly, exp[...]texto impreso
Fabero Jiménez, Juan Carlos ; Mecha López, Hortensia ; Franco Peláez, Francisco Javier ; Clemente Barreira, Juan Antonio ; Korkian, Golnaz ; Rey, Solenne ; Cheymol, Benjamin ; Baylac, Maud ; Hubert, Guillaume ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2020A sensitivity characterization of a Xilinx Artix-7 FPGA against 14.2 MeV neutrons is presented. The content of the internal SRAMs and flip-flops were downloaded in a PC and compared with a golden version of it. Flipped cells were identified and [...]texto impreso
Clemente Barreira, Juan Antonio ; Franco Peláez, Francisco Javier ; Villa, Francesca ; Rey, Sole ; Baylac, Maud ; Mecha López, Hortensia ; Agapito Serrano, Juan Andrés ; Puchner, Helmut ; Hubert, Guillaume ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2015-09-18This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented.texto impreso
Clemente Barreira, Juan Antonio ; Franco Peláez, Francisco Javier ; Villa, Francesca ; Baylac, Maud ; Rey, Solenne ; Mecha López, Hortensia ; Agapito Serrano, Juan Andrés ; Puchner, Helmut ; Hubert, Guillaume ; Velazco, Raoul | IEEE | 2016-08Recently, the occurrence of multiple events in static tests has been investigated by checking the statistical distribution of the difference between the addresses of the words containing bitflips. That method has been successfully applied to Fie[...]texto impreso
Franco Peláez, Francisco Javier ; Clemente Barreira, Juan Antonio ; Baylac, Maud ; Rey, Solenne ; Villa, Francesca ; Mecha López, Hortensia ; Agapito Serrano, Juan Andrés ; Puchner, Helmut ; Hubert, Guillaume ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2017-08-01This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper[...]