Título:
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Electronic-structure of fibonacci Si ?-doped GaAs
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Autores:
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Domínguez-Adame Acosta, Francisco ;
Maciá Barber, Enrique Alfonso ;
Méndez Martín, Bianchi
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Tipo de documento:
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texto impreso
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Editorial:
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Elsevier Science BV, 1994-10-31
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/restrictedAccess
info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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We study the electronic structure of a new type of Fibonacci superlattice based on Si delta-doped GaAs. Assuming that delta-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to delta-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope functions.
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En línea:
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https://eprints.ucm.es/id/eprint/25164/1/MendezBianchi65.pdf
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