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Título:
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Low temperature intermediate band metallic behavior in Ti implanted Si
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Autores:
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Mártil de la Plaza, Ignacio ;
García Hemme, Eric ;
García Hernansanz, Rodrigo ;
González Díaz, Germán ;
Olea Ariza, Javier ;
Prado Millán, Álvaro del
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Tipo de documento:
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texto impreso
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Editorial:
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Elsevier Science SA, 2012-08-31
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/restrictedAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effect measurements using the van der Pauw technique suggest that the insulator-metal transition takes place for implantation doses in the 10(14)-10(16) cm(-2) range. Results of the sample implanted with the 10(16) cm(-2) dose show a metallic behavior at low temperature that is explained by the formation of a p-type IB out of the Ti deep levels. This suggests that the IB would be semi-filled, which is essential for IB photovoltaic devices.
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En línea:
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https://eprints.ucm.es/id/eprint/25808/1/Martil%2C10.pdf
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