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Título:
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Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscope
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Autores:
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López, Iñaki ;
Nogales Díaz, Emilio ;
Hidalgo Alcalde, Pedro ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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Wiley-V C H Verlag Gmbh, 2012-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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The field emission properties of gallium oxide nanowires grown by thermal evaporation-deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined for Sn doped nanowires. X-ray photoelectron spectroscopy measurements have been performed to calculate the work function of Sn doped Ga2O3. The results show improved field emission properties of Sn doped Ga2O3 nanowires, with a lower threshold field (below 1.0 V/mu m). The obtained values are competitive with those achieved in other nanostructured materials, including carbon nanotubes.
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En línea:
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https://eprints.ucm.es/id/eprint/24194/1/MendezBianchi07.pdf
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