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Título:
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Scanning tunneling spectroscopy study of erbium doped GaSb crystals
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Autores:
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Hidalgo Alcalde, Pedro ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier ;
Plaza, J. L. ;
Dieguez, E.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1999-08-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals the gap is close to the bulk value. Inhomogeneities in the local electronic properties of the doped crystals are studied by a correlation of the CL images and STS data.
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En línea:
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https://eprints.ucm.es/id/eprint/24675/1/MendezBianchi48libre.pdf
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