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Título:
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Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán
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Tipo de documento:
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texto impreso
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Editorial:
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Inst. Pure Applied Physics, 2001-07
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We have analyzed the influence of the dielectric composition and the post deposition rapid thermal annealing (RTA) treatment on the electrical characteristics of electron-cyclotron-resonance plasma-deposited SiNx:H/n and p-In0.53Ga0.47As interfaces. The devices are characterized by means of capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and conductance transient analyses. Our results show that a simple cleaning step of the semiconductor surface prior to insulator deposition, and a post deposition RTA process are sufficient to obtain good-quality structures, the n-type being better than the p-type. In both cases, we conclude that a dielectric composition of x = 1.50 seems to be the best choice, and that the most adequate RTA temperature is between 500 degreesC and 600 degreesC.
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En línea:
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https://eprints.ucm.es/id/eprint/26252/1/Martil%2C67.pdf
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