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Título:
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The EL2 trap in highly doped GaAs:Te
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Autores:
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Castaldini, A. ;
Cavallini, A. ;
Fraboni, B. ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1995-12-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed.
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En línea:
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https://eprints.ucm.es/id/eprint/26837/1/PiquerasJ240libre.pdf
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