Título:
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Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealing
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán
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Tipo de documento:
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texto impreso
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Editorial:
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Elsevier Science SA, 1999-04
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We have analyzed the influence of rapid thermal annealing (from 300 to 1050 degrees C) on the optical properties of a-SiN(x):H. Three compositions were investigated: x = 0.97, x = 1.43 and x = 1.55. Two different behaviors are observed depending on whether the as-grown nitrogen to silicon ratio of the samples is above or below the percolation threshold (x = 1.1) of Si-Si bonds, in the matrix of silicon nitride. The samples with x: = 1.43 and 1.55 experience an increase of the Tauc coefficient (B) and a decrease of the Urbach parameter (E(0)) at low annealing temperatures. while at high temperatures the trend is inverted. On the contrary, the samples with x = 0.97 show a slight and continuous increase of B and a similar decrease of E(0). The different behavior of the films with x
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En línea:
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https://eprints.ucm.es/id/eprint/27005/1/Martil%2C89.pdf
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