|
Título:
|
Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
|
|
Autores:
|
González Díaz, Germán ;
Artús, L. ;
Blanco, N. ;
Cuscó, R. ;
Ibañez, J. ;
Long, A.R. ;
Rahman, M.
|
|
Tipo de documento:
|
texto impreso
|
|
Editorial:
|
American Institute of Physics, 2000-12-01
|
|
Dimensiones:
|
application/pdf
|
|
Nota general:
|
info:eu-repo/semantics/openAccess
|
|
Idiomas:
|
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Electricidad
,
Materia = Ciencias: Física: Electrónica
,
Tipo = Artículo
|
|
Resumen:
|
We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model.
|
|
En línea:
|
https://eprints.ucm.es/id/eprint/27441/1/Gonzalez-Diaz%2CG%2080libre.pdf
|
