|
Título:
|
Origin of the surface metallization in single-domain K/Si(100)2x1
|
|
Autores:
|
Segovia, P. ;
Castro, G. R. ;
Mascaraque Susunaga, Arantzazu ;
Prieto, P. ;
Kim, H. J. ;
Michel, E. G.
|
|
Tipo de documento:
|
texto impreso
|
|
Editorial:
|
American Physical Society, 1996-11-15
|
|
Dimensiones:
|
application/pdf
|
|
Nota general:
|
info:eu-repo/semantics/openAccess
|
|
Idiomas:
|
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Física de materiales
,
Tipo = Artículo
|
|
Resumen:
|
The electronic structure and the metallization onset of single-domain K/Si(100)2x1 have been investigated with angle-resolved polarization-sensitive ultraviolet photoemission. The electronic states producing the surface metallization have been studied for increasing K coverages up to room-temperature saturation. As K coverage increases, the interface undergoes a transition at a critical coverage, from a low-coverage semiconducting phase, to a saturation-coverage metallic phase. Two different surface states (F-1 and F-2) have been detected in the vicinity of the Fermi level. These two states are sequentially filled along the metallization process. The coverage dependence of both F-1 and F-2, and their symmetry properties indicate that the metallization is due to the filling of an initially empty surface band (appearance of F-2) We relate F-1 to the completion of K chains in the single-domain surface. The changes detected in K 3p line shape correlate well with the modifications of the valence band, and support that the surface remains semiconducting up to the filling of F-2.
|
|
En línea:
|
https://eprints.ucm.es/id/eprint/28685/1/Mascaraque%2CA%2057libre.pdf
|
