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Título:
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3D and 2D growth of SnO? nanostructures on Ga?O? nanowires: synthesis and structural characterization
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Autores:
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Alonso Orts, Manuel ;
Sánchez, A. M. ;
López, I. ;
Nogales Díaz, Emilio ;
Piqueras de Noriega, Javier ;
Méndez Martín, Bianchi
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Tipo de documento:
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texto impreso
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Editorial:
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RSC Royal Society of Chemistry, 2017-11-07
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Materia = Ciencias: Física: Física del estado sólido
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Tipo = Artículo
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Resumen:
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In this work, a simple thermal evaporation method has been used to obtain a variety of Ga?O?/SnO? nano-assemblies with different shapes and dimensionalities, which may affect their physical properties, especially those influenced by surface properties. The obtained nanostructures have been characterized using electron microscopy-related techniques in order to understand their growth mechanisms. By using both metallic gallium and tin oxide powders as precursors, Ga?O? nanowires (straight or branched) decorated with SnO? nanoparticles or SnO? quasi-two dimensional plates have been produced after dynamic thermal annealing for 2.5, 8.0 and 15.0 hours. For shorter treatments, accumulation of Sn atoms at the Ga?O? nanowire surface or defect planes has been observed by high resolution TEM, which suggests that they could act as nucleation sites for the further growth of SnO?. On the other hand, longer treatments promote the formation of Ga-doped SnO2 belts, from which SnO? nanowires eventually emerge. High-resolution TEM imaging and microanalysis reveal that Ga accumulation at (200) SnO? planes could stabilize some non-stoichiometric or intermediate tin oxide phases, such as Sn?O?, at local areas in the belts. The presence of non-stoichiometric tin oxide is relevant in applications, since surface states affect the physical-chemical behavior of tin oxide.
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En línea:
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https://eprints.ucm.es/45673/1/MendezBianchi95%20POST%2BEMB_07_11_2018.pdf
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