|
Título:
|
Direct observation of tunnelled intergrowth in SnO2/Ga2O3 complex nanowires
|
|
Autores:
|
Alonso Orts, Manuel ;
Nogales Díaz, Emilio ;
Méndez Martín, Bianchi ;
Rigby, Oliver M. ;
Stamp, Alice V. ;
Hindmarsh, Steve A. ;
Sánchez, Ana M.
|
|
Tipo de documento:
|
texto impreso
|
|
Editorial:
|
IOP Publishing, 2019-02-01
|
|
Dimensiones:
|
application/pdf
|
|
Nota general:
|
cc_by_nc_nd
info:eu-repo/semantics/openAccess
|
|
Idiomas:
|
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Física de materiales
,
Materia = Ciencias: Física: Física del estado sólido
,
Tipo = Artículo
|
|
Resumen:
|
beta-Ga_2O_3 intergrowths have been revealed in the SnO_2 rutile structure when SnO_2/Ga_2O_3 complex nanostructures are grown by thermal evaporation with a catalyst-free basis method. The structure is formed by a Ga_2O_3 nanowire trunk, around which a rutile SnO_2 particle is formed with [001] aligned to the [010] Ga_2O_3 trunk axis. Inside the SnO_2 particle, beta-Ga_2O_3 units occur separated periodically by hexagonal tunnels in the (210) rutile plane. Orange (620 nm) optical emission from tin oxide, with a narrow linewidth indicating localised electronic states, may be associated with this beta-Ga_2O_3 intergrowth.
|
|
En línea:
|
https://eprints.ucm.es/50708/1/MendezBianchi97%20POST%2BCC%28nc-nd%29%2BEMB_01_feb_2020.pdf
|
