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Título:
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Double ion implantation and pulsed laser melting processes for third generation solar cells
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Autores:
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Mártil de la Plaza, Ignacio ;
García Hemme, Eric ;
García Hernansanz, Rodrigo ;
González Díaz, Germán ;
Olea Ariza, Javier ;
Prado Millán, Álvaro del
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Tipo de documento:
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texto impreso
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Editorial:
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Hindawi Publishing Corporation, 2013
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Dimensiones:
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application/pdf
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Nota general:
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cc_by
info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 10 4 cm(-1) in the photons energy range from 1.1 to 0.6 eV.
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En línea:
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https://eprints.ucm.es/id/eprint/25774/1/Martil%2C04libre.pdf
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