|
Título:
|
Physical properties of plasma deposited SiOx thin films
|
|
Autores:
|
Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Prado Millán, Álvaro del ;
San Andres Serrano, Enrique
|
|
Tipo de documento:
|
texto impreso
|
|
Editorial:
|
Pergamon-Elsevier Science Ltd., 2002-09-26
|
|
Dimensiones:
|
application/pdf
|
|
Nota general:
|
info:eu-repo/semantics/openAccess
|
|
Idiomas:
|
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Electricidad
,
Materia = Ciencias: Física: Electrónica
,
Tipo = Artículo
|
|
Resumen:
|
The composition (x = [O]/[Si]), hydrogen content, bonding configuration and paramagnetic defects of SiOx films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH4 and O-2 as precursor gases, and depending on gases flux ratio, films from x approximate to 2 to 0.9 were obtained. Infrared spectroscopy analysis showed the presence of different vibration modes: Si-O stretching, used to estimate film composition, bending and rocking with positions nearly independent on film composition, and various Si-H peaks: stretching and wagging-bending. Films with non-stoichiometric composition show a wider peak than the ones deposited at higher gas ratios. Ellipsometry measurements showed a refractive index lambda = 632.8 nm comprised between 1.45 and 2.04. Electron spin resonance measurements shows that the stoichiometric films (x approximate to 2) present the well known E' centre (.SidropO(3)) with concentrations in the 10(16)cm(-3) range, while for Si-rich films (x much less than 2) the Si dangling bond centre (D centre, .SidropSi(3)) is dominant, with concentrations in the 10(18)-10(19) cm(-3) range. For near-stoichiometric (x approximate to 1.9) films also both E' and D centres are present, but in this case the E' centre is dominant.
|
|
En línea:
|
https://eprints.ucm.es/id/eprint/26174/1/Martil%2C59.pdf
|
