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Título:
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Junction spectroscopy of highly doped GaAs: detection of the EL2 trap
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Autores:
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Castaldini, A. ;
Cavallini, A. ;
Fraboni, B. ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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Elsevier Science SA, 1994-12
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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The disappearance of the electron trap at E_t=E_c-0.82 eV (EL2) level in highly doped samples, observed in the literature for N_D-N_A>1x10^17 cm^(-3) has been assessed by junction spectroscopy investigations of liquid-encapsulated Czochralski GaAs:Te with N_D-N_A up to about 7x10^17 cm^(-3). By choosing appropriate spectroscopy methods, we have detected the EL2 peak, even in the most doped sample. This shows that such a defect is present in the material, but its detection is controlled by the quasi-Fermi level position in the gap, which also affects the Schottky diode operating conditions.
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