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Título:
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Role of oxygen on the dangling bond configuration of low oxygen content SiNx :H films deposited at room temperature
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Autores:
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Mártil de la Plaza, Ignacio ;
Bravo, D. ;
Fernández, M. ;
García, S. ;
López, F.J.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1995-11-27
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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SiNx:H films with a wide composition range and, some of them, with low oxygen content are deposited at room temperature. The defects observed in the films are attributed to Si-dangling bonds, with a structure depending on film composition. For the N-rich films they are of the form . Si=(N-3), whereas for the films with similar [N]/[Si] ratio but containing oxygen, the predominant defect is proposed to be Si=(Si2O), despite of the high N content and the low O content of these films. The spin density of the films has been related to the bonds that hydrogen establishes (either Si-H or N-H), with the maximum value corresponding to the minimum hydrogen content. Both maximum and minimum values, respectively, are obtained at the silicon percolation limit of the Si-Si bonds into the SiNx:H network, x similar to 1.10.
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En línea:
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https://eprints.ucm.es/id/eprint/27112/1/Martil%2C107libre.pdf
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