Título:
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Comparison of electrical and luminescence data for the A center in CdTe
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Autores:
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Castaldini, A. ;
Cavallini, A. ;
Fraboni, B. ;
Fernández Sánchez, Paloma ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 1997
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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We have investigated the electrical and optical properties of the deep levels responsible for the 1.4-1.5 eV luminescence band usually observed in II-VI compounds. We compared the energy levels found by cathodoluminescence and junction spectroscopy methods for semi-insulating (CdTe:Cl and Cd_(0.8)Zn_(0.2)Te) and semiconducting samples (undoped CdTe). The techniques utilized were deep level transient spectroscopy (DLTS) on semiconducting samples and photoinduced current transient spectroscopy and photo-DLTS on high resistivity materials. These last two techniques are complementary and allow the determination of the trap character (donor/acceptor). Three acceptor levels are seen in the electrical transient data at E(upsilon)+0.12, 0.14, and 0.16 eV with hole capture cross sections of 2x10^(-16), 1x10(-16), and 4X10^(-17) cm(2), respectively. The lowest level is seen only in Cl doped material corroborating the literature optical and electron spin resonance identification of a level at E_(upsilon)+0.12 eV as being a V_Cd+Cl_Te, donor-acceptor pair center. All three levels may be present in the 1.4 eV luminescence band.
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En línea:
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https://eprints.ucm.es/id/eprint/26713/1/PiquerasJ222libre.pdf
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