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Título:
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Electronic structure and vertical transport in random dimer GaAs-Al_xGa_(1-x)As superlattices
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Autores:
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Parisini, A. ;
Tarricone, L. ;
Bellani, V. ;
Parravicini, G. B. ;
Díaz García, Elena ;
Domínguez-Adame Acosta, Francisco ;
Hey, R.
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Tipo de documento:
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texto impreso
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Editorial:
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American Physical Society, 2001-01-15
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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We report a systematic study of several GaAs-AlxGa1-xAs semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder.
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En línea:
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https://eprints.ucm.es/id/eprint/27531/1/Dguez-Adame79libre.pdf
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