Título:
|
Subband energy in two-band delta-doped semiconductors
|
Autores:
|
Domínguez-Adame Acosta, Francisco
|
Tipo de documento:
|
texto impreso
|
Editorial:
|
Elsevier, 1996-02-19
|
Dimensiones:
|
application/pdf
|
Nota general:
|
info:eu-repo/semantics/openAccess
|
Idiomas:
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Física de materiales
,
Materia = Ciencias: Física: Física del estado sólido
,
Tipo = Artículo
|
Resumen:
|
We study the electron dynamics in a two-band ?-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the ?-doping layer, we are able to find exact solutions of the Dirac-type equation describing the coupling of host bands. As an application we then consider Si ?-doped GaAs. In particular we find that the ground subband energy scales as a power law of the Si concentration per unit area in a wide range of doping levels. In addition, the coupling of host bands leads to a depression of the subband energy due to nonparabolicity effects.
|
En línea:
|
https://eprints.ucm.es/45687/1/Dguez-Adame127_PREPRINT.pdf
|