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Título:
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Cathodoluminescence enhancement in porous silicon cracked in vacuum
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Autores:
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Rams, J. ;
Méndez Martín, Bianchi ;
Craciun, G. ;
Plugaru, R. ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 1999-03-22
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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An increase of the cathodoluminescence (CL) signal of porous silicon (PS) cracked in vacuum of up to three orders of magnitude has been achieved. Under high electron-beam currents, the samples cracked in interconnected pieces of tens of microns, exposing new surfaces to the electron beam. This treatment enhances the radiative intensity in PS associated with a broadband peaked at 720 nm, which is highly stable while the sample is kept in vacuum. Cross-sectional CL observations show that most of the light is generated in the top surface of the porous layer. The spectral depth dependence of the emitted light reveals a relatively weak blue emission in the region closer to the substrate.
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En línea:
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https://eprints.ucm.es/id/eprint/24677/1/MendezBianchi49libre.pdf
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