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Título:
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Study of defects in implanted GaAs - te by cathodoluminescence
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Autores:
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Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier ;
Cavallini, A. ;
Fraboni, B.
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Tipo de documento:
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texto impreso
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Editorial:
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Elsevier Science SA Lausanne, 1994-05
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Evidence for IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been investigated. The increase in the CL intensity with implantation dose after heat treatment supports the association of Si and/or Te with the radiation-induced Ga vacancies to form Si(Ga) or Te(Ga) defects.
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