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Título:
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Compositional analysis of thin SiOxNy : H films by heavy-ion ERDA, standard RBS, EDX and AES: a comparison
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Prado Millán, Álvaro del ;
San Andres Serrano, Enrique
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Tipo de documento:
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texto impreso
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Editorial:
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Elsevier, 2004-04
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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The composition of silicon oxynitride (SiOxNy:H) films deposited by electron cyclotron resonance chemical vapour deposition (ECR-CVD) was analysed by ion beam techniques, heavy-ion elastic recoil detection analysis (HI-ERDA) with 150 MeV Kr-86 ions and Rutherford backscattering spectroscopy (RBS) with 1.4 MeV He-4 ions. The results were compared with energy dispersive X-ray analysis (EDX) and Auger electron spectroscopy (AES). Since HI-ERDA provides absolute atomic concentrations of all film components including hydrogen with a sensitivity of at least 0.005 at% the data from this method were used as a quantitative reference to assess the applicability of RBS, EDX and AES to the analysis of silicon oxynitrides. For each of these techniques the comparison with HI-ERDA allowed a discussion of the different sources of error, especially of those causing systematic deviations of the measured concentration values. A novel approach to determine from RBS spectra also the hydrogen concentrations appeared to be applicable for hydrogen levels exceeding 2 at%. Furthermore, it is shown that the film density can be determined from the HI-ERDA results alone or in combination with single-wavelength ellipsometry.
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En línea:
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https://eprints.ucm.es/id/eprint/26072/1/Martil%2C43.pdf
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