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Título:
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Effect of ?-Hgl_2 epitaxial growth on the defect structure of CdTe:Ge substrates
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Autores:
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Panin, G. N. ;
Piqueras de Noriega, Javier ;
Sochinskii, N. ;
Dieguez, E.
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 1997-02-17
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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The a?-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending up to about 500 mu m from the ?-Hgl_2 /CdTe:Ge interface. CL spectra of the layer reveal the appearance of a band related to tellurium vacancies as well as the decrease of the emission attributed to defect complexes involving Ge. The data obtained indicate that Ge-impurity gettering and V-Te generation at the interface take place during ?-Hgl_2 epitaxial growth.
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En línea:
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https://eprints.ucm.es/id/eprint/26432/1/PiquerasJ212libre.pdf
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