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Título:
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Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector
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Autores:
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Mártil de la Plaza, Ignacio ;
García Hemme, Eric ;
García Hernansanz, Rodrigo ;
González Díaz, Germán ;
Olea Ariza, Javier ;
Pastor Pastor, David ;
Prado Millán, Álvaro del
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 2014-05-26
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We report room-temperature operation of 1 x 1 cm(2) infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by a pulsed laser melting process. A high sub-band gap responsivity of 34 mVW(-1) has been obtained operating at the useful telecommunication applications wavelength of 1.55 mu m (0.8 eV). The sub-band gap responsivity shows a cut-off frequency as high as 1.9 kHz. These Si-based devices exhibit a non-previous reported specific detectivity of 1.7 x 10(4) cm Hz(1/2) W-1 at 660Hz, under a 1.55 mu m wavelength light. This work shows the potential of Ti supersaturated Si as a fully CMOS-compatible material for the infrared photodetection technology.
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En línea:
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https://eprints.ucm.es/id/eprint/27164/1/Martil%2C141libre.pdf
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