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Título:
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Development of CdZnTe doped with Bi for gamma radiation detection
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Autores:
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Hidalgo Alcalde, Pedro ;
Cepeda Jiménez, C. M. ;
Ruano, O. A. ;
Carreño, F.
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Tipo de documento:
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texto impreso
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Editorial:
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Royal Soc Chemistry, 2010
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Bulk CZT crystals doped with Bi (1 x 10(19) at/cm(3)) have been grown by the Oscillatory Bridgman method, the growth velocity and the zinc concentration profile being improved by the insertion of a Pt tube acting as a cold finger. The stoichiometric uniformity was examined by energy dispersive X-ray analysis, and the zinc concentration was confirmed by inductively coupled plasma mass spectroscopy and cathodoluminescence measurements. The resistivity value was in the range of 8 x 10(8) Omega cm , being smaller for the passivated sample, which at the same time had counter device properties.
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