Título:
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Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Olea Ariza, Javier ;
Prado Millán, Álvaro del
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Tipo de documento:
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texto impreso
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Editorial:
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IOP publishing ltd, 2013-12
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/restrictedAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at,photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage.
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En línea:
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https://eprints.ucm.es/id/eprint/25729/1/Martil%2C140.pdf
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