Título:
|
Intermediate band mobility in heavily titanium-doped silicon layers
|
Autores:
|
Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Olea Ariza, Javier
|
Tipo de documento:
|
texto impreso
|
Editorial:
|
Elsevier Science BV, 2009-09
|
Dimensiones:
|
application/pdf
|
Nota general:
|
info:eu-repo/semantics/openAccess
|
Idiomas:
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Electricidad
,
Materia = Ciencias: Física: Electrónica
,
Tipo = Artículo
|
Resumen:
|
The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of ail intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed.
|
En línea:
|
https://eprints.ucm.es/id/eprint/25892/1/Martil%2C20.pdf
|