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Título:
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Visible and infrared luminescence study of Er doped ?-Ga_2O_3 and Er_3 Ga_5O_12
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Autores:
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Nogales Díaz, Emilio ;
Garcia, J. A. ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier ;
Lorenz, K. ;
Alves, E.
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Tipo de documento:
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texto impreso
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Editorial:
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IOP publishing ltd, 2008-03-20
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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The luminescence properties of Er doped ?-Ga_2O_3 and of the erbium gallium garnet Er_3 Ga_5O_12(ErGG) have been investigated both in the visible and in the infrared (IR) ranges by means of photoluminescence (PL). Doping of the ?-Ga_2O_3 was obtained in two different ways: erbium ion implantation into ?-Ga_2O_3 and high temperature annealing of a mixture of Er_2O_3 and Ga_2_O3 powders. X-ray diffraction shows that the latter samples present both ?-Ga_2O_3 and ErGG phases. The PL studies demonstrate that the beta-Ga2O3 in these samples is doped with erbium. The differences in the luminescence emission and excitation peaks of the Er^3+ ions in these two hosts are studied through selective PL measurements. Strong near IR emission and weak green emission from Er^3+ in the ?-Ga_2O_3 matrix is obtained. The opposite is obtained for Er^3+ in ErGG when excited under the same conditions. Room temperature luminescence is observed from erbium in the two hosts.
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En línea:
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https://eprints.ucm.es/id/eprint/24285/1/MendezBianchi17.pdf
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