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Título:
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Luminescence from growth topographic features in GaN : Si films
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Autores:
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Zaldivar, M.H. ;
Fernández Sánchez, Paloma ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1998-01-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Cathodoluminescence (CL) in the scanning electron microscope is used to investigate the nature of defects responsible for the luminescence associated with round and hexagonal-like topographic features of GaN:Si films. Round hillocks of the size of a few microns, which sometimes have a nanopipe related central hole, do not influence the luminescence emission of the film. Hillocks with sizes of several tens of microns show a marked CL contrast at the center and at the border. The origin of the observed contrast is attributed to a growth induced inhomogeneous distribution of point defects and impurities. Radiation with the electron beam of the scanning microscope causes a decrease of the CL intensity without spectral changes.
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En línea:
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https://eprints.ucm.es/id/eprint/26433/1/PiquerasJ196libre.pdf
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